MBD101, MMBD101LT1
http://onsemi.com
2
TYPICAL CHARACTERISTICS
(TA
= 25
°C unless noted)
Figure 1. Reverse Leakage
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Noise Figure
PLO, LOCAL OSCILLATOR POWER (mW)
, FORWARD CURRENT (mA)
I
F
, REVERSE LEAKAGE ( A)
I
R
1.00.1 0.2 0.5 2.01.0 105.0
11
3.0
0.6
0 1.0 2.0 3.0 4.0
1.0
0.9
0.8
0.7
0.1
0.3 0.4
100
0.0130 40 50 60 70 80 10090
0.1
130
110 120
0.07
0.05
0.02
2.0
0.5 0.6 0.7
1.0
0.7
0.5
10
1.0
Figure 5. Noise Figure Test Circuit
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
LOCAL
OSCILLATOR
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
NOISE
FIGURE METER
H.P. 342A
NOTES ON TESTING AND SPECIFICATIONS
Note 1 — CD
is measured using a capacitance bridge (Boonton
Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 — LS
is measured on a package having a short instead of a
die, using an impedance bridge (Boonton Radio Model
250A RX Meter).
0.2
VR
= 3.0 V
5.0
4.0
7.0
6.0
9.0
8.0
10
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(TEST CIRCUIT IN FIGURE 5)
TA
= 25
°C
TA
= ?40
°C
TA
= 85
°C
NF, NOISE FIGURE (dB)
C
D
,
CAPACITANCE (pF)
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